MT41K256M16HA-125:E Memory Integrated Circuit SDRAM DDR3L 4Gbit

MT41K256M16HA-125:E Memory IC SDRAM DDR3L 4Gbit Parallel 800 MHz 13.75 ns FBGA96

Specifications

Description 

DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev :E) data sheet specifications when running in 1.5V compatible mode.

Features

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V

  – Supports DDR3L devices to be backward compatible in 1.5V applications

• Differential bidirectional data strobe • 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#) • 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 105°C

  – 64ms, 8192-cycle refresh up to 85°C

  – 32ms, 8192-cycle refresh at >85°C to 95°C

  – 16ms, 8192-cycle refresh at >95°C to 105°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

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MT41K256M16HA-125:E SDRAM IC

MT41K256M16HA-125:E Memory Integrated Circuit SDRAM DDR3L 4Gbit Images